Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices

By Norbert Seifert, P. Slankard, M. Kirsch, B. Narasimham, V. Zia, C. Brookreson, A. Vo, S. Mitra, B. Gill, J. Maiz. 2006 IEEE International Reliability Physics Symposium Proceedings, 2006

224 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/94f32f908f713b10f1253bc59c49cc2454f46c48

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. G. Gasiot
2. P. Roche
3. D. Giot

Citations in the corpus

• Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering (2007, background): “As technologies scales down, the probability that a particle upsets more than a single cell increases [8]–[10]”