Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

By Z. Diao, Zhanjie Li, Shengyuan Wang, Yunfei Ding, A. Panchula, Eugene Chen, Lien-Chang Wang, Y. Huai. 2007

447 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/922c607d898d2b0147c2a774502b96d6ce4b5858

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Evaluating STT-RAM as an energy-efficient main memory alternative (2013, background): “A more detailed treatment of STT-RAM can be found in [8], [9], [15], [33], [54] , [15], [54].”
Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, background): “Our discussion here will focus on ferromagnetic monolayers where SR is due to AMR and field torque driven magnetization dynamics, with spin torque discussed later in the context of bilayer devices and MTJs.”
Relaxing non-volatility for fast and energy-efficient STT-RAM caches (2011, methodology): “The stability is estimated by the thermal factor, Δ, which is calculated from Equation 1 using the volume (V ), the in-plane anisotropy field (Hk), the saturation magnetization (Ms), and the absolute temperature in kelvin (T ) [8].”
A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory (2013, background): “Comparing the performances between STT-MRAM with 6T SRAM considering variation effects across different technology generations is an overwhelming task.”
Spintronics (2015, methodology): “The principle of the STT switching mechanism is schematically illustrated in Figure 3(a) with a spin-valve structure, composed of two FM layers, that is, F1 and F2, and a spacer layer M. F1 and F2 are initially magnetized along different directions.”
A novel architecture of the 3D stacked MRAM L2 cache for CMPs (2009, background): “The current is related to the material of the tunnel barrier layer, the writing pulse duration, and the MTJ geometry [11].”
Spin-transfer torque magnetic memory as a stochastic memristive synapse (2014, background): “Thanks to considerable progress in recent years, spintransfer torque magnetic memory (STT-MRAM) – the second generation of magnetic memory – now appears as a breakthrough for embedded and standalone non-volatile memory, providing fast programming and high endurance [1].”