Electronic transport in graphene : A semiclassical approach including midgap states

By T. Stauber, N. M. R. Peres, Francisco Guinea. 2007

426 citations recorded by the source corpus.

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states which leads to a similar k-dependence of the relaxation time as charged impurities. The new scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/917882e35e2bce09745265b85b1d999bda01fa56

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Approaching ballistic transport in suspended graphene. (2008, methodology): “Outside the saturation regime, the curves can be fit with a model where scattering is primarily due to boundary confinement and midgap state”
Colloquium: The transport properties of graphene: An introduction (2010, methodology): “…a model based on what is now called resonant scatterers dominated conductivity, giving rise to mid-gap states (Basko, 2008; Robinson et al., 2008; Stauber et al., 2007; Wehling et al., 2009, 2010), plus the additional effect of charged impurities, which, however, do not play the central role.”
Electronic transport in two-dimensional graphene (2010, background): “kR0) Y o(kR0) k! ! ˇ 2 1 ln(kR0) ; (3.35) where J 0(x) [Y 0(x)] is the zeroth order Bessel function of the rst (second) kind. Expanding for small carrier density, one then nds for the conductivity (Stauber et al., 2007) ˙= 2e2 ˇh n n d ln2(k FR 0); (3.36) which other than the logarithmic factor, mi”
Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007, neutral): “Longitudinal acoustic (LA) phonon scattering is expecte”
Nobel Lecture: Graphene: Materials in the Flatland (2011, background): “…Cheianov and Fal’ko, 2006b; Nomura and MacDonald, 2006; Ostrovsky et al., 2006; Peres et al., 2006; Adam et al., 2007; Nomura and MacDonald, 2007; Stauber et al., 2007; Chen et al., 2008; Katsnelson and Geim, 2008; Morozov et al., 2008; Ponomarenko et al., 2009; Ni et al., 2010), the careful…”
Experimental Review of Graphene (2011, background): “to produce midgap states in graphene [95].”
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “As a remark, we notice that experimental studies on intentionally damaged graphene have shown that even uncharged defects, if able to produce strong scattering, may result in a linear  vs n behavior [86].”
Modeling Graphene in the Finite-Difference Time-Domain Method Using a Surface Boundary Condition (2013, result): “We consider a grapheme sheet of K, eV and ps, consistent with [30].”