Approaching ballistic transport in suspended graphene.
By Xu Du, I. Skachko, A. Barker, E. Andrei. Nature Nanotechnology, 2008
3,059 citations recorded by the source corpus.
The discovery of graphene raises the prospect of a new class of nanoelectronic devices based on the extraordinary physical properties of this one-atom-thick layer of carbon. Unlike two-dimensional electron layers in semiconductors, where the charge carriers become immobile at low densities, the carrier mobility in graphene can remain high, even when their density vanishes at the Dirac point. However, when the graphene sample is supported on an insulating substrate, potential fluctuations induce charge puddles that obscure the Dirac point physics. Here we show that the fluctuations are significantly reduced in suspended graphene samples and we report low-temperature mobility approaching 200,000 cm2 V-1 s-1 for carrier densities below 5 x 109 cm-2. Such values cannot be attained in semiconductors or non-suspended graphene. Moreover, unlike graphene samples supported by a substrate, the conductivity of suspended graphene at the Dirac point is strongly dependent on temperature and approaches ballistic values at liquid helium temperatures. At higher temperatures, above 100 K, we observe the onset of thermally induced long-range scattering.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3b0be934fc1c8932d94c06d7205f61722f34fdf6
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Materials Chemistry
- K. Novoselov
- N. M. R. Peres
- A.K. Geim
- Francisco Guinea
- A. Di Bartolomeo
- E. Hwang
- Takashi Taniguchi
- Kenji Watanabe
Citations in the corpus
- Colloquium: The transport properties of graphene: An introduction (2010, background): “Finally, in suspended graphene (Bolotin et al., 2008a,b; Du et al., 2008), where the material is hanging over a trench, mid-gap states are expected to survive, since some fraction of the corresponding scatterers will still be present, whereas charged impurities are expected to be absent.”
- Colloquium: Graphene spectroscopy (2014, background): “The electronic mobility of graphene on hBN approaches ∼ 105 cm2/Vs implying the mean-free path of several hundreds nm (Dean et al., 2010; Du et al., 2008).”