A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

By Youngdon Choi, I. Song, Mu-Hui Park, Hoeju Chung, Sang-whan Chang, B. Cho, Jinyoung Kim, Younghoon Oh, D. Kwon, Jung Sunwoo and 20 more. IEEE International Solid-State Circuits Conference, 2012

332 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/90a80ffd112ff30e9ffa54cf5f6efe56182b9e49

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shimeng Yu
2. Pai-Yu Chen
3. Jennifer Olson Hasler
4. Yuan Xie
5. Steven Swanson
6. Zhang Tao
7. Rajeev Balasubramonian
8. Bo Marr

In Hardware and Architecture

1. Rajeev Balasubramonian
2. Naveen Muralimanohar
3. Yuan Xie
4. Steven Swanson
5. Cong Xu
6. Jian Xu
7. Dimin Niu
8. Shimeng Yu

In Materials Chemistry

1. Steven Swanson
2. Zhang Tao
3. Pai-Yu Chen
4. Jian Xu
5. Shimeng Yu

Citations in the corpus

• Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “For example, Samsung has reported an 8 Gb PCM prototype chip in 20 nm node featuring 40 MB/s write bandwidth [44].”
• NOVA: A Log-structured File System for Hybrid Volatile/Non-volatile Main Memories (2016, background): “…memory technologies Emerging non-volatile memory technologies, such as spin-torque transfer RAM (STT-RAM) [28] [42], phase change memory (PCM) [10] [18] [29] [52], resistive RAM (ReRAM) [22] [62], and 3D XPoint memory technology [1], promise to provide fast, non-volatile, byte-addressable…”
• Finding a roadmap to achieve large neuromorphic hardware systems (2013, background): “Phase change memory is often considered a potential option for neuromorphic synapses, often due to initial success in such devices commercially (i.e., by Samsung (Chung et al., 2011; Choi et al., 2012), although earlier papers are also published).”
• Emerging Memory Technologies: Recent Trends and Prospects (2016, background): “Samsung reported an 8-Gb cross-point PCRAM prototype chip [46].”
• Overcoming the challenges of crossbar resistive memory architectures (2015, background): “In the past few years, many researchers have explored PCM technology for main memory – both as a stand-alone memory or in conjunction with DRAM [19, 37, 57].”