MOS transistor modeling for RF IC design

By C. Enz, Yuhua Cheng. IEEE Journal of Solid-State Circuits, 2000

307 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8da30f8b08cb7f366aeb666f90e9acb528634133

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In Electrical and Electronic Engineering

1. Eric A. Vittoz
2. Christian C. Enz
3. M. J. Deen
4. Yuhua Cheng
5. Chih-Hung Chen

Citations in the corpus

• An MOS transistor model for RF IC design valid in all regions of operation (2002, methodology): “Parameters , , and can be expressed in terms of the two-port noise parameters , , , and according to [ 26 ], [27]”
• Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design (2006, methodology): “12 Several resistive substrate networks: (a) from [141], (b) from [49], (c) from [143], and (d) from [144]”
• MOSFET modeling for RF IC design (2005, methodology): “In some RF models [8], [10], the intrinsic substrate has been connected to the source side in order to save one node and one component for the subcircuit model.”