An MOS transistor model for RF IC design valid in all regions of operation

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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design (2006, methodology): “Similar results have been obtained for other operating points and other device geometries using the same scalable model [48, 49, 52].”
MOSFET modeling for RF IC design (2005, background): “Another mechanism which might generate the induced gate noise is through the inversion charge variation caused by the substrate noise [55] via the bulk transconductance .”
Design considerations for 60 GHz CMOS radios (2004, background): “Conventional RF CMOS transistor models [ 7 ] are based on a compact model, such as BSIM3, with external parasitics to model the substrate and gate resistance.”
Millimeter-wave CMOS design (2005, background): “As mentioned, is limited by resistive losses, the most significant being the gate resistance , series source/drain resistances , nonquasi-static channel resistance , and resistive substrate network ( , and ) [10].”