Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

By G. Leung, C. O. Chui. IEEE Electron Device Letters, 2012

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7eb720c5271357b6ab6d3f00d7fb685b708d3a35

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Chitrakant Sahu
2. Jawar Singh

Citations in the corpus

• Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “Although, JLT shows better electrical properties such as reduced short channel effects (SCEs), low OFF current [1]–[5], but variability is high due to random dopant fluctuation (RDF) and it is projected to be a serious problem when scaled to nanoscale dimensions [6]–[8].”