Spin coherence and dephasing in GaN

By B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. Grimaldi, S. Keller, Steven P. DenBaars, Umesh K. Mishra, E. Hu, David D. Awschalom. 2001

174 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/8b13aba84342eaf6b3a9921760be27c7b350c7e8

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In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. Pallab K. Bhattacharya
3. M. Holub
4. H. Akinaga
5. T. Dietl

Citations in the corpus

• Semiconductor spintronics (2002, background): “The same model also shows that higher than room temperature will be possible in wide-gap semiconductors such as GaN or ZnO, as shown in Fig.”
• Spin-polarized light-emitting diodes and lasers (2007, background): “At the time of this writing, however, no unambiguous demonstration of spin injection in a nitridebased spin-LED has surfaced despite the long spin lifetime in GaN (20 ns [117]) due to its weak spin–orbit coupling.”