Junctionless Multiple-Gate Transistors for Analog Applications

By R. Doria, M. Pavanello, R. Trevisoli, M. Souza, Chi-Woo Lee, Isabelle Ferain, N. Akhavan, Ran Yan, P. Razavi, R. Yu and 2 more. IEEE Transactions on Electron Devices, 2011

273 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b2e07f1edbd802d827a00948bb32489e95f0cbca

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In Electrical and Electronic Engineering

1. Roy P. Paily
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4. Te-Kuang Chiang
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Citations in the corpus

• A Junctionless Nanowire Transistor With a Dual-Material Gate (2012, background): “However, due to the high doping concentration causing the carrier mobility reduced, some speed and frequency related characteristics, such as the drive capability, and transconductance of junctionless MOSFETs still need to be improved [4]–[7].”
• A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Recently, the JL MOSFET has been shown as an attractive device in RF analog [3] and memory digital circuits [4] because a JL transistor possesses excellent turn-on and output characteristics [5], [6]; a nearly ideal subthreshold swing; a large ON-current, which is quite comparable to that of an undo”
• A Dual-Material Gate Junctionless Transistor With High- $k$ Spacer for Enhanced Analog Performance (2014, background): “However, JLTs suffer from lesser drain current and transconductance compared with inversion mode MOSFETs due to high doping concentration in the channel region [1], [5], [6].”