Properties of carbon-doped GaN
By Haipeng Tang, J. Webb, J. Bardwell, S. Raymond, J. Salzman, C. Uzan-Saguy. 2001
141 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/86a4640932944cfc2aa108706a148c7fa3d308eb
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In Condensed Matter Physics
Citations in the corpus
- AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, background): “the growth system and in the device epitaxial stack itself and allows a sharp transition to a UID GaN channel [16].”