60GHz transceiver circuits in SiGe bipolar technology

By Scott K. Reynolds, Brian A. Floyd, Ullrich R. Pfeiffer, Thomas Zwick. IEEE International Solid-State Circuits Conference, 2004

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On-chip antennas in silicon ICs and their application (2005, background): “THE SPEED improvements of silicon and SiGe bipolar transistors [1]–[3], and MOS transistors [4]–[6] have made the implementation of integrated circuits (ICs) operating at 10 GHz and higher feasible [7]–[13].”
De-embedding transmission line measurements for accurate modeling of IC designs (2006, background): “Hence, transmission lines play an increasingly vital role in both narrow-band [ 3 ] and broad-band [4] circuit design.”
Design considerations for 60 GHz CMOS radios (2004, methodology): “Transceiver circuits using SiGe have been demonstrated to operate at 60 GHz with good performance [ 3 ].”
30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits (2005, background): “The potentially large consumer markets have attracted considerable interest in 60-GHz wireless local area network (WLAN) and 77-GHz collision avoidance automotive RADAR, resulting in 60-GHz low-noise amplifiers (LNAs), power amplifiers, and mixers [ 1 ], and 80-GHz voltage-controlled oscillators (VC”