Phonon-limited mobility inn-type single-layer MoS2from first principles

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Charge Scattering and Mobility in Atomically Thin Semiconductors (2013, methodology): “2ρsω (1− k ' k cosθ )dθ ε2d 2 −π π ∫ , and (11) 1 τ1−ODP ± = D1 2m*(Nq + 1 2 ± 1 2 ) 4π!”
Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation (2016, background): “It has been demonstrated that the electrical transport in MoS2 and other TMDs is strongly influenced by extrinsic trapping sites and scattering centers such as charged impurities and structural imperfection, leading to a much lower mobility than the calculated intrinsic limit [9, 11, 36].”
Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2 (2013, background): “Great efforts have been made to understand the dynamics of carriers of MoS2 including mobilities of excitons [3, 4], electrons/holes [5, 6] and the effects from electrical [7] and stress [8-10] fields applied within the layers.”
Two-dimensional semiconductors with possible high room temperature mobility (2014, methodology): “Previous theoretical works [8-10] consider only electron mobilities.”