New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
By A. Cerdeira, M. Estrada, R. García, Adelmo Ortiz-Conde, F. Sánchez. 2001
156 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/84a0ffa8bffd90fcf5a2f3132487cfa30edfd9c4
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In Electrical and Electronic Engineering
Citations in the corpus
- A review of recent MOSFET threshold voltage extraction methods (2002, methodology): “Amorphous and polycrystalline thin film transistors (TFTs) introduce the additional difficulty that the saturation drain current in strong inversion is usually modeled by a power law with an exponent which can differ from 2 [45,46].”
- Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors (2003, methodology): “Cerdeira et al. [ 15 ] have included the effect of in a unified extraction method, which we refer to as the integral method, based on the AIM-SPICE model.”
- Revisiting MOSFET threshold voltage extraction methods (2013, methodology): “Some methods have been put forward specifically for the task of extracting the correct value of VT in non-crystalline thin MOSFET TFTs [75,86].”