Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

By Chao Lu, James A. Cooper, T. Tsuji, G. Chung, John R. Williams, K. McDonald, L. Feldman. 2003

140 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/812eed9ab88850af0976ef88f814b96ffa6271eb

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In Electrical and Electronic Engineering

1. Zheng Chen

Citations in the corpus

• A Physical Model of High Temperature 4H-SiC MOSFETs (2008, background): “Other research on SiC MOSFETs fabricated with a different process has indicated that at high gate bias and high temperatures, phonon scattering has a strong effect on surface mobility [21].”