Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

By Jae Kyeong Jeong, Hui Yang, J. Jeong, Y. Mo, Hyedong Kim. 2008

806 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7f88abc9aeb3db8c9a820fcac3f8a5fb0d5f5c33

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hideo Hosono
2. T. Kamiya
3. K. Nomura
4. Jang Yeon Kwon
5. John F. Conley
6. Jae Kyeong Jeong
7. J. Wager
8. Pedro Barquinha

In Materials Chemistry

1. Hideo Hosono
2. T. Kamiya
3. K. Nomura
4. Jang Yeon Kwon
5. Jae Kyeong Jeong
6. John F. Conley
7. Pedro Barquinha
8. Elvira Fortunato

Citations in the corpus

• The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs (2011, neutral): “the gate-bias stressing of a-IGZO TFTs [4].”
• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “The adoption of a high quality passivation layer on the bare channel layer would further improve the PBS, NBS and NBIS stability of the resulting TMO TFTs [11, 75, 76].”
• Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors (2011, background): “Electron trapping at the top air-facing surface by absorbed oxygen (O2 ) [4], [8] leads to a positive shift in Vth.”
• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “[65] discuss how positive bias stressing can lead to field-induced adsorption of O2 and desorption of H2O.”