Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

By K. Nagashio, T. Nishimura, K. Kita, A. Toriumi. International Electron Devices Meeting, 2009

162 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7e8953bf1d316c1b722bad6d584b351987a8a5cb

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In Electrical and Electronic Engineering

1. A. Di Bartolomeo
2. Filippo Giubileo
3. Frank Schwierz

In Materials Chemistry

1. Filippo Giubileo
2. A. Di Bartolomeo
3. Frank Schwierz

Citations in the corpus

• Graphene Transistors: Status, Prospects, and Problems (2013, background): “1000 m [78], about ten times the contact resistance in Si and III–V FETs.”
• The role of contact resistance in graphene field-effect devices (2017, background): “Transfer characteristics with similar asymmetry have been reported [134, 148, 122, 184-188], with feature appearing as plateau or as double dip in the n- or p-branch.”