Measurement of high-field electron transport in silicon carbide

By I. Khan, James A. Cooper. 2000

144 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7dc99e760440d895afb34e522ff3977612e34c80

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In Electrical and Electronic Engineering

1. Zheng Chen

Citations in the corpus

• A Physical Model of High Temperature 4H-SiC MOSFETs (2008, result): “The temperature dependence of this saturation velocity (η = 0.5) is similar to the temperature dependence of bulk saturation velocity of 4H-SiC [ 22 ].”