Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
By A. David, M. Grundmann. 2010
325 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7cf0d60ee2eca57d96af8b0f3aaa647ac8da0373
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “6 semi-quantitatively illustrates the mechanism for droop reduction, inclusion of dynamic , , and coefficients that change with current density (particularly for -plane) and phase space filling will provide a more quantitatively accurate comparison [3].”
- ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “operating current [3,6], makes finding the recombination coefficients feasible.”
- Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array (2012, background): “sent Shockley-Read-Hall, radiative and Auger recombination, respectively [10].”