Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature

By K. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, Jacek K. Furdyna. 2002

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Defect identification in semiconductors with positron annihilation: Experiment and theory (2013, background): “Most common of these are Rutherford backscattering and nuclear reaction analysis which are very efficient for detecting and identifying atoms that are not in correct lattice positions (Wahl et al., 1997; Yu et al., 2002).”
Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Since there is no apparent deficit of p compared to NMn, and since the interstitial Mn impurity (Edmonds et al., 2002; Máca and Mašek, 2002; Yu et al., 2002) compensates one local moment but two holes it can be concluded that interstitial Mn, which is the key contributor to extrinsic disorder, is…”
Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “In many cases TM impurities rather than residing in the substitution sites, prefer to occupy interstitial positions, the case of TM-doped Si (Zunger, 1986), but also of Mn in GaAs, as suggested theoretically (Mašek and Máca, 2001) and found experimentally (Yu et al., 2002).”
Theory of ferromagnetic (III, Mn) V semiconductors (2006, methodology): “In (Ga,Mn)As DMSs a significant fraction of the Mn atoms is also incorporated in interstitial positions (Yu et al., 2002).”