Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors

By H. Q. Chiang, B. McFarlane, D. Hong, R. Presley, J. Wager. 2008

146 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/79cc7edd109d3298c041dfbe392a8d8f92cd8863

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In Electrical and Electronic Engineering

1. John F. Conley
2. N. Xu

In Materials Chemistry

1. John F. Conley
2. N. Xu

Citations in the corpus

• Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy (2011, background): “Generally, the TFT with higher Vth has more defects at the interface between the channel and the dielectric, as seen from the calculated Ni, and has worse stability, as discussed in [14], i.”
• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “[60] reported that increasing the percentage of O2 and decreasing the RF power during IGZO deposition increased the initial VON and improved the stability in thermal SiO2 dielectric/ RF-sputtered IGZO channel TFTs.”
• Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors (2009, unknown): “intense development worldwide [7]–[12].”