Hole conductivity and compensation in epitaxial GaN:Mg layers

By U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, M. Maier. 2000

247 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7789e77414fcc98f271a068936356d5b3bf67dd6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Xiaobing Luo
2. Sheng Liu
3. Kai Wang
4. C. G. Van de Walle
5. J. L. Lyons
6. Run Hu

In Electrical and Electronic Engineering

1. J. L. Lyons
2. Xiaobing Luo
3. C. G. Van de Walle

In Materials Chemistry

1. J. L. Lyons
2. C. G. Van de Walle
3. Xiaobing Luo
4. Sheng Liu
5. Kai Wang
6. Run Hu

Citations in the corpus

• A brief review of co-doping (2016, background): “For example, without any co-dopants, the maximum hole concentration in Mg doped GaN is around 1017cm−3 [4].”
• Heat and fluid flow in high-power LED packaging and applications (2016, background): “However, the high mole fraction of Al also prohibits hole injection [36-38].”
• Computationally predicted energies and properties of defects in GaN (2017, background): “In addition, since they occur in a + or 3+ charge state, it is expected that they would be attracted to negatively charged MgGa centers and form VN-MgGa complexes.(83) The hybrid functional calculations of Yan et al.”