Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations
By K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, Hideo Hosono. 2007
266 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/75f4d6355cfdab6a30f2cd45891c5d8ca6b6bcfa
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In Electrical and Electronic Engineering
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
In Materials Chemistry
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
In Polymers and Plastics
Citations in the corpus
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “The formation energies of these deep oxygen deficiencies are calculated as the differences of the DFT total energies between the initial states and the final states of the reaction equation InGaZnO In Ga ZnO O [44].”
- Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model (2009, unknown): “( is the energy level of CBM) by a nearly-free electron model because first-principle calculations proved that the CB minimum (CBM) in IGZO is highly isotropic and non-degenerated excepted for the spin degeneracy [ 29 ].”