Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

By T. Kamiya, K. Nomura, Hideo Hosono. Journal of Display Technology, 2009

223 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/5ee8aa5c815ec7b132930659667347824ca9a00f

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In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Polymers and Plastics

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “This reduction of Ne can be explained by the high ionic field strength of the Ga ion, which allows oxygen to be bound tightly and prevents the formation of oxygen vacancies [1, 20, 28, 44].”