Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

By Jin-seong Park, Jae Kyeong Jeong, Hyun‐Joong Chung, Y. Mo, Hyedong Kim. 2008

483 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/7015f9841db68dd9ce4f4ad713728eace0040aa6

How researchers see this paper

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In Electrical and Electronic Engineering

1. Henning Sirringhaus
2. G. Horowitz
3. S. Ludwigs

In Polymers and Plastics

1. Henning Sirringhaus

Citations in the corpus

• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, unknown): “[67] observed a”
• Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. (2011, background): “Devices processed at 230 °C and encapsulated with a thin fluoropolymer film spin-coated onto the tungsten source–drain electrodes exhibited a reduced threshold voltage shift, which suggests that some of the observed threshold voltage shift is due to adsorption of atmospheric species on the backchann”
• Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors (2011, background): “Moisture is also a factor that degrades the performance of the IGZO TFT by producing a leakage current [13].”