Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and p-type selective doping

By A. M. Nazmul, S. Sugahara, Masaaki Tanaka. 2002

203 citations recorded by the source corpus.

The interaction between the magnetic dopants (Mn) and 2-dimensional hole gas (2DHG) in Mn \ensuremath{\delta}-doped GaAs/Be-doped $p$-type AlGaAs heterostructures, where holes were supplied from the Be-doped AlGaAs to the Mn \ensuremath{\delta}-doped GaAs, realized ferromagnetic ordering. The Curie temperature ${T}_{\mathrm{C}}$ of the heterostructure prepared with suitable growth conditions was 172 K, highest among the ${T}_{\mathrm{C}}$ values reported in III-V (InAs, GaAs) magnetic semiconductors.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6efba2c8c4a22dee11f0a2072afc64f38ea9b0fc

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Ferromagnetic semiconductors: moving beyond (Ga,Mn)As (2005, background): “Additionally, tunable wave function overlap between magnetic ions and carriers confined to quantum structures has already been demonstrated in prototypical devices.(27,87) Observations of large magneto-transport effects suggest the possibility of developing very sensitive magnetic field sensors usin”
Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “…in more complex semiconductor heterostructures with highly Mn-doped monolayers (δ-doped layers), showing promissing results (Chen et al., 2002; Fernández-Rossier and Sham, 2002; Kawakami et al., 2000; Myers et al., 2004; Nazmul et al., 2005, 2003; Sanvito, 2003; Vurgaftman and Meyer, 2001).”
Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO (2003, background): “Among the materials reported so far, Mn-doped GaAs has been found to be ferromagnetic with the highest reporte”
Structure and magnetism of cobalt-doped ZnO thin films (2008, background): “While there has been much work on the III–V DMS materials, notably (In,Mn)As and (Ga,Mn)As, their ferromagnetic Curie temperatures (Tc) (90 K for (In,Mn)As [4] and 172 K for (Ga,Mn)As [5]) are too low for practical applications.”
Spin-polarized light-emitting diodes and lasers (2007, background): “Although low-temperature, post-growth annealing has been shown to improve the ferromagnetic transition temperatures and electrical properties due to the reduction of defect levels, the Curie temperature is still low (TC < 173 K) [38, 39].”