Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

By Allan H. MacDonald, P. Schiffer, Nitin Samarth. 2005

618 citations recorded by the source corpus.

The recent development of MBE techniques for growth of III–V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a74266ada9e9c969c669756bf1a3ff14fed9972c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. T. Dietl
2. J. Sinova
3. T. Jungwirth
4. Allan H. MacDonald
5. J. Masek
6. Jan Kucera
7. J. Wunderlich
8. Jinlong Yang

In Materials Chemistry

1. T. Dietl
2. J. Sinova
3. T. Jungwirth
4. Allan H. MacDonald
5. J. Masek
6. Jan Kucera
7. Xingxing Li
8. J. Wunderlich

Citations in the corpus

• First principles design of spintronics materials (2016, background): “Diluted magnetic semiconductors (DMSs) are obtained from traditional nonmagnetic semiconductors by doping with small amount of magnetic ions [16-20].”
• Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “Several extended pa- 3 pers cover the experimental properties of (III,Mn)V DMSs, particularly (Ga,Mn)As and (In,Mn)As, interpreted within the carrier-mediated ferromagnetism model (MacDonald et al., 2005; Matsukura et al., 2002; Ohno, 1999).”
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “In the metallic regime Mn can, like a shallow acceptor (C, Be, Mg, Zn, e.g.), provide delocalized holes with a low-temperature density comparable to Mn density (Jungwirth et al., 2005; MacDonald et al., 2005; Ruzmetov et al., 2004).”