Transparent Oxide Optoelectronics
By H. Ohta, Hideo Hosono. 2004
296 citations recorded by the source corpus.
This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)5 with a natural superlattice structure, near-ultraviolet (UV) emitting diodes composed of heteroepitaxially grown p-type SrCu2O2 and n-type ZnO, and single-crystalline NiO and ZnO pn-heterojunction diode UV detectors.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6e3c61101919bc7c2cfbe3f72dc8dd167a15298d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Uwe Schroeder
- Thomas Mikolajick
- I. Fina
- Vincent Garcia
- J. MacManus‐Driscoll
- M. Lira-Cantú
- B. Dkhil
- G. Niklasson
In Electronic, Optical and Magnetic Materials
- Manuel Bibes
- J. MacManus‐Driscoll
- G. Niklasson
- J. van den Brink
- Vincent Garcia
- N. Pryds
- Darrell Schlom
- K. Hono
In Materials Chemistry
- Uwe Schroeder
- Thomas Mikolajick
- Vincent Garcia
- Manuel Bibes
- I. Fina
- J. MacManus‐Driscoll
- M. Lira-Cantú
- B. Dkhil
Citations in the corpus
- Towards Oxide Electronics: a Roadmap (2019, background): “Today, the TCOs adopted by industry are typically based on In2O3, SnO2 and ZnO and their subsequent combinations being used in several optoelectronic applications such as solar cells [784,785], flat panel displays [786], touch screens, light emitting diodes [787,788] and transparent electronics [789”