Losses in single-mode silicon-on-insulator strip waveguides and bends.

By Yurii A. Vlasov, S. Mcnab. Optics Express, 2004

1,016 citations recorded by the source corpus.

We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6+/-0.1dB/cm for the TE polarization were measured at the telecommunications wavelength of 1.5microm. Losses per 90 masculine bend are measured to be 0.086+/-0.005dB for a bending radius of 1microm and as low as 0.013+/-0.005dB for a bend radius of 2microm. These record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.

Subfields: Electrical and Electronic Engineering, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/6cbe31a9e5a9fe171e302ce7270aa99ad5af9121

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In Electrical and Electronic Engineering

In Surfaces, Coatings and Films

Citations in the corpus

Slow light in photonic crystals (2008, background): “Nevertheless, the loss in a PWW has been reduced to around 1 dB cm −1 by recent technical improvement”
Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography (2009, background): “Exploiting this high refractive index contrast, researchers have demonstrated low-loss waveguides and small radius bends [1]–[3].”
Microphotonics devices based on silicon microfabrication technology (2005, background): “loss also has been reduced largely by improving the fabrication process [15]–[18].”
CMOS-compatible graphene photodetector covering all optical communication bands (2013, methodology): “The devices are fabricated in a simple three-step process: (1) etching and passivation of the silicon waveguide, (2) deposition and structuring of graphene and (3) metallization.”
Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology (2010, neutral): “Recently, tremendous progress has been made in reducing propagation loss and the loss of microbends [1]–[3].”
Low-Loss Multimode-Interference-Based Crossings for Silicon Wire Waveguides (2006, background): “Silicon wire waveguides with submicron cross section exhibit tight light confinement, and thus are particularly favorable for high-density-integrated photonic circuits [3], [4].”