Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
By Guangle Zhou, Rui Li, T. Vasen, M. Qi, S. Chae, Yeqing Lu, Qin Zhang, Haijun Zhu, J. Kuo, T. Kosel and 4 more. International Electron Devices Meeting, 2012
174 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6c59674567f9859a83b17aadc4a63730885ffaa0
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In Electrical and Electronic Engineering
Citations in the corpus
- Design of U-Shape Channel Tunnel FETs With SiGe Source Regions (2014, background): “The pnpn TFET structure has been proposed for improving the drive current and the SS of TFET [18]–[28].”
- Tunnel Field-Effect Transistors: State-of-the-Art (2014, unknown): “Heterojunction III-V TFETs like InGaAs/GaAsSb [42], [43], InAs/GaSb [44], InAsSb/GaSb [45], AlGaSb/InAs [20], [46], and In0.”