Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators
By Y. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, David A. B. Miller, J. Harris. 2006
157 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6bfe68ee92e289ec21059f93c69dbb1b33dff8aa
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Jürgen Michel
- Lionel C. Kimerling
- Jifeng Liu
- David A. B. Miller
- John E. Bowers
- Di Liang
- Dirk Englund
- Peter Leonard McMahon
Citations in the corpus
- Attojoule Optoelectronics for Low-Energy Information Processing and Communications (2016, background): “68There is a small additional shift of the binding energy of the exciton itself, though this is relatively small compared to the shifts of the electron and hole “single-particle” levels [66], [68].”
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators (2008, background): “(Ge-on-Si) with a high EA contrast similar to that of germanium QW structure”