A 45nm generation Phase Change Memory technology

By G. S. Numonyx, Via C. Olivetti, A. Brianza. International Electron Devices Meeting, 2009

191 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6be6ee44ae7e9f66ace57792895a2cf9d7faa58a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Onur Mutlu
2. Mahmut Taylan Kandemir
3. Evangelos Eleftheriou
4. Abu Sebastian
5. Anand Sivasubramaniam
6. Emre Kultursay
7. Geoffrey W. Burr
8. Chung Hon Lam

In Materials Chemistry

1. Onur Mutlu
2. Abu Sebastian
3. Geoffrey W. Burr
4. Chung Hon Lam

Citations in the corpus

• Evaluating STT-RAM as an energy-efficient main memory alternative (2013, result): “However, it is both much slower (about 2-4X read, 10-100X write) and much more power hungry (about 2-4X read, 10-50X write), compared to DRAM [30], [50], [55], [61].”
• Recent Progress in Phase-Change Memory Technology (2016, methodology): “(Reprinted, with permission, from [18].”