Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

By Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, S. Maikap, P. Tzeng, Cha-Hsin Lin, L. Lee, M. Tsai. 2007

152 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6ba75c556a9fa476576789e332d1c926be15ef5d

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Shimeng Yu

Citations in the corpus

• Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap (2010, methodology): “Except for the HfO2 film, which was deposited by using atomic layer deposition [9], all the other films, including the thin Ti layer of 10 nm, which was inserted between HfO2 and the TiN cap layer, were deposited by sputtering.”