Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
By Hsing‐Hung Hsieh, T. Kamiya, K. Nomura, Hideo Hosono, Chung‐Chih Wu. 2008
337 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/65f33888b8e0e52b24873452bbc5cd5720e1d131
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In Electrical and Electronic Engineering
Citations in the corpus
- Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors (2009, background): “of magnitude smaller than that of a-Si:H [26] All IGZO constituents (i.”
- Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics (2010, background): “of the free carrier density was assumed to be negligible [1], [2].”