High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

By H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, Hideo Hosono. 2006

1,093 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/64870467884735cc7e2212eea816b209127a9ad9

How researchers see this paper

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In Electrical and Electronic Engineering

1. Jae Kyeong Jeong
2. Jang Yeon Kwon
3. Pedro Barquinha
4. Y. Mo
5. G. Gonçalves
6. Sang Yeol Lee
7. S. Chang
8. Luís Pereira

In Materials Chemistry

1. Jae Kyeong Jeong
2. Jang Yeon Kwon
3. Pedro Barquinha
4. Y. Mo
5. G. Gonçalves
6. Sang Yeol Lee
7. S. Chang
8. Luís Pereira

In Polymers and Plastics

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics (2010, background): “The device performance reported herein is comparable to the state-of-the-art characteristics for the IGZO TFTs with various novel gate insulators, including Y2O3 [2], Al2O3 [8], and ZrO2 [9].”
• Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display (2008, methodology): “is higher compared with the LTPS TFT because the channel layer of the oxide TFT has amorphous phase like the a-Si TFT [3], [4].”