Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

By K. Ji, Ji-in Kim, Y. Mo, J. Jeong, Shinhyuk Yang, Chi-Sun Hwang, S. Park, M. Ryu, Sangyun Lee, Jae Kyeong Jeong. IEEE Electron Device Letters, 2010

157 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/39078c60defce4a6577ad85ddf33f459ec6f5096