Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

By Jang Yeon Kwon, K. Son, J. Jung, Tae Sang Kim, M. Ryu, K. Park, B. Yoo, Jung Woo Kim, Young Gu Lee, K. Park and 2 more. IEEE Electron Device Letters, 2008

265 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5b3393d52d6e730c4685f356a463533ad76d360f

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In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, methodology): “The first BCE IGZO TFTs-driven four inch AMOLED panel was fabricated by dry etching of the Mo S/D film on the IGZO contact layer using fluorine-based plasma [77].”
• Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors (2011, background): “AMORPHOUS metal–oxide thin-film transistors (TFTs) such as amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs have excellent field-effect mobility, rendering them potential candidates for replacing the conventional Si-based TFTs [1], [2].”