Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

By M. Nakayama, T. Kai, N. Shimomura, M. Amano, E. Kitagawa, T. Nagase, M. Yoshikawa, T. Kishi, S. Ikegawa, H. Yoda. 2008

275 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/647a0cc0ca6abf3fab44e4e4c4ce273e4ed88701

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Weisheng Zhao
2. Jacques-Olivier Klein
3. Dafine Ravelosona
4. Yue Zhang
5. Claude Chappert
6. V. Joshi

In Electrical and Electronic Engineering

1. Weisheng Zhao
2. Jacques-Olivier Klein
3. Dafine Ravelosona
4. Yue Zhang
5. Claude Chappert

In Electronic, Optical and Magnetic Materials

1. V. Joshi

Citations in the corpus

• Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions (2012, methodology): “This issue greatly limits the potential for further miniaturization of MTJs, and other storage principles have been investigated to overcome these hurdles [15]–[17].”
• Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes (2008, background): “ular MTJs with MgO barriers were reported [11], [12].”