Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
By Joel K. W. Yang, B. Cord, H. Duan, K. Berggren, J. Klingfus, S. Nam, Ki-Bum Kim, M. Rooks. 2009
192 citations recorded by the source corpus.
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6424bdf7bac0535744d48eba0d0398d45cd4346c
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In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Sub-10 nm fabrication: methods and applications (2021, unknown): “(b) Reprinted with permission from [118].”
- New Generation Electron Beam Resists: A Review (2017, background): “HSQ (Dow Corning) is the commercially available resist that has provided the highest resolution EBL structures down to sub-5 nm.(20) HSQ is an inorganic material belonging to the spherosiloxane family, with a low dielectric constant (2.”