Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

By W. Guan, Shibing Long, R. Jia, Ming Liu. 2007

186 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5f96342422e2905bc969c330dd4a51a791a9b499

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shibing Long
2. Zhaoping Liu
3. Wen Wang
4. Xufeng Zhou

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[15] Guan WH, Long SB, Jia R, Liu M.”
• Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “Even within the class of ZrO2-based ReRAM, the possible switching mechanisms seem to be surprisingly diverse, including electron trapping and detrapping [9], [13], formation and rupture of conducting filament [10], and the motion of oxygen vacancy/ion [12].”
• Nonvolatile resistive switching in graphene oxide thin films (2009, unknown): “, 2010), ZrO2 (Wu et al., 2007; Guan et al., 2008; Liu et al., 2009), and ZnO (Chang et al.”