High-performance thin-film transistors using semiconductor nanowires and nanoribbons
By Xiangfeng Duan, C. Niu, V. Sahi, Jian Chen, J. W. Parce, S. Empedocles, J. Goldman. Nature, 2003
855 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/58f77419243f21de5a05a6c4c4914a378f5ec775
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In Biomedical Engineering
In Electrical and Electronic Engineering
- Peidong Yang
- Wei Dang Lu
- M. Law
- Joshua E. Goldberger
- Ping Xie
- Charles M. Lieber
- Navab Singh
- Shui-Tong Lee
Citations in the corpus
- Applications of nano-catalyst in new era (2011, background): “Many nano-structured materials are now being investigated for their potential applications in photovoltaic, electro-optical, micromechanical and sensor devices (Whitesides and Grzybowski, 2002; Duan et al., 2003; McAlpine et al., 2003).”
- Nanowire Transistor Performance Limits and Applications (2008, background): “Notably, these values are two–three orders better than that obtained in amorphous Si or organic devices [136]–[138].”
- High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices (2006, background): “Considering the volume inversion in the channel [18] and to facilitate comparison with previous works [4], [7], [9]–[11],”
- Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels (2011, background): “superior performance, owing to their small volume and the accompanying reduction in defects [3], [4].”