Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

By C. Su, T. Tsai, Y. Liou, Zer-Ming Lin, Horng-Chih Lin, T. Chao. IEEE Electron Device Letters, 2011

196 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c90c0f8b2754ab9160c0141a2dc016dee5e9974e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Suresh Gundapaneni
2. Anil Kottantharayil
3. S. Ganguly

In Electrical and Electronic Engineering

1. Suresh Gundapaneni
2. Anil Kottantharayil
3. S. Ganguly
4. Kota Murali
5. Mohit Bajaj
6. R. Pandey

Citations in the corpus

• Effect of Band-to-Band Tunneling on Junctionless Transistors (2012, background): “p-channel JLTs on germanium-on-insulator (GeOI) substrates [11] and n-channel JLTs with poly-Si nanowire channels have been also reported [9].”
• A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, unknown): “B EING SUPERIOR to conventional junction-based (JB) MOSFETs, junctionless (JL) MOSFETs without the junction between the source/drain and channel [1], [2] can be efficiently scaled into a nanometer regime for VLSI.”