High performance germanium-on-silicon detectors for optical communications

By Silvia Famà, L. Colace, G. Masini, G. Assanto, H. Luan. 2002

174 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/53528e746d87b14ac254608f03c91575bdd3005a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. John E. Bowers

In Biomedical Engineering

1. Mario Paniccia
2. John E. Bowers

In Electrical and Electronic Engineering

1. John E. Bowers
2. Mario Paniccia
3. Richard A. Soref
4. Po Dong

Citations in the corpus

• High-speed Germanium-on-SOI lateral PIN photodiodes (2004, result): “Taking into account the smaller electrode spacings of our devices, these values are comparable to results in the literature for Ge PIN diodes [2], [3].”
• Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product (2009, result): “The dark current density at −8 V is 18  mA   cm , which is comparable to germaniumssilicon p–i–n results published by other group”