High-speed Germanium-on-SOI lateral PIN photodiodes

By G. Dehlinger, S. J. Koester, Jeremy D. Schaub, J. O. Chu, Q. Ouyang, A. Grill. IEEE Photonics Technology Letters, 2004

159 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Roadmapping the next generation of silicon photonics (2023, methodology): “For comparison, data for InP-based integrated photonics is also shown.”
Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization (2010, background): “In [26], it was reported that the spacing between the n+ and p+ regions affects this voltage dependence.”
Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications (2006, methodology): “high-temperature cyclic annealing utilized to reduce the defect density [47].”
Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth (2005, background): “A bandwidth of 29 GHz and an external quantum efficiency of 46% at 850 nm have been reported for lateral Ge-detectors grown on silicon-on-insulator substrates (SOI) [5].”
High-performance Ge-on-Si photodetectors (2010, unknown): “have extended this two-step approach by demonstrating growth of Ge on an ultrathin silicon-on-insulator surfac”