Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions

By Y. Sakuraba, M. Hattori, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki, H. Kubota. 2006

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Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, methodology): “opposite magnetization configuration, which can enhance the spin accumulation [90], [91], 2) reduction of Ms and α by adding other elements to CoFeB or by employing new magnetic materials [92]–[94], 3) employing a controlled pulse shape to realize precharging [95], 4) the use of a nanoaperture struc”
Oxide Spintronics (2007, unknown): “We note that, in MTJs based on half-metallic Heussler alloys, an analogous influence of the spin-dependent density of states on the TMR(V ) has been reported recently [65].”
Half-metallic ferromagnets: From band structure to many-body effects (2007, background): “…states in HMF is provided by tunneling phenomena (Auslender and Irkhin, 1985b; Auth et al., 2003; Bratkovsky, 1998; Gercsi et al., 2006; Sakuraba et al., 2006a, 2007, 2006b), in particular, by Andreev reflection spectroscopy for a HMF-superconductor tunnel junction (Tkachov et al.,…”