Review of technology for normally-off HEMTs with p-GaN gate

By Giuseppe Greco, F. Iucolano, Fabrizio Roccaforte. 2017

263 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4ca5976a71ec2a8902195e7925bf5683244834fc

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1. Guangnan Zhou
2. Fanming Zeng
3. Wenmao Li
4. Hui Wang
5. T. Duan
6. J. An
7. Lingli Jiang

Citations in the corpus

• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “References 1.”