A self-consistent theory for graphene transport
By S. Adam, E. Hwang, V. Galitski. Proceedings of the National Academy of Sciences of the United States of America, 2007
1,090 citations recorded by the source corpus.
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities nimp. For dirty samples (250 × 1010 cm−2 < nimp < 400 × 1010 cm−2), the value of the minimum conductivity at low carrier density is indeed 4e2/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on nimp, increasing to 8e2/h for nimp ≈ 20 × 1010 cm−2. A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/43f3cf4f567a1a3b23024d8a8a975f5d11924dc1
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Citations in the corpus
- A role for graphene in silicon-based semiconductor devices (2011, background): “, for which three factors need to be considered: minimizing defects in graphene; minimizing impurities that cause scattering at the graphene channel–gate dielectric interfac”
- Charge transport in disordered graphene-based low dimensional materials (2008, background): “Self consistent RPA-Boltzmann theory also found Coulomb scattering induced conductivity asymmetry [ 163 ], without the possibility however to tackle this with localization effects.”
- Measurement of the quantum capacitance of graphene. (2009, background): “In reality, various impurities and defects exist, and recent theoretical and experimental results have shown that charged impurities have a key role in the transport properties of graphene near the Dirac poin”
- Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “The results of the weak-localization measurements also provide a clear indication as to which of the two sources of long-range disorder (charged impurities at the substrate surface [13,33,34] and random strain fluctuations in the graphene lattice [35]) plays the most relevant role.”
- Colloquium: Graphene spectroscopy (2014, methodology): “A more detailed model (Adam et al., 2007; Hwang et al., 2007a; Rossi and Das Sarma, 2008; Shklovskii, 2007) invokes a system of conducting electron-rich and hole-rich regions separated”
- Colloquium: The transport properties of graphene: An introduction (2010, methodology): “If we now repeat the same analysis for graphene, we obtain (Adam et al., 2008, 2007; Basko, 2008; Peres et al., 2007b; Stauber et al., 2007): σ0 = 2e2τvF kF /h, where we have now included the contributions of both spin and valley degeneracies.”
- Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene. (2013, neutral): “2 mS and EF = 50 meV [27], giving a maximum responsivity of 2×10 V/W, which is three orders of magnitude larger than our experimental result.”
- Electronic transport in two-dimensional graphene (2010, methodology): “This is a consequence of the weak screening properties of graphene and was pointed out in (Adam et al., 2007; Galitski et al., 2007).”