Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

By N. Xu, Lifeng Liu, X. Sun, Xiaohui Liu, Dedong Han, Yi Wang, R. Han, Jinfeng Kang, Bin Yu. 2008

365 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4178f18d35a1b214a38f50dd753faa4d20c984f9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan
4. Seunghyup Yoo

In Materials Chemistry

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

Citations in the corpus

• Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches (2013, background): “NiOx) serve as the conducting paths in a higher resistance matrix [9, 10].”
• Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications (2009, background): “It is known that the HRS current in ZnO oxide films can be explained by Poole–Frenkel emissions [2] or by hopping conduction [3].”
• A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, background): “The resistive switching behavior is associated with the formation and rupture of conductivity filament (CF) [7]–[9].”
• A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, neutral): “With one of the electrodes replaced by oxidizable materials such as Ti, Al, TiN, or TaN, usually, bipolar mode is obtained, e.g., Ti/ZrO2/Pt [11], TiN/HfO2/Pt [14], TiN/ZnO/Pt [15], etc.”
• Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, methodology): “In our previous work [4], the set process was identified to”