n-Type doped transparent conducting binary oxides: an overview

By Sebastian C. Dixon, David O. Scanlon, C. Carmalt, I. Parkin. 2016

283 citations recorded by the source corpus.

This article focuses on n-type doped transparent conducting binary oxides – namely, those with the general formula MxOy:D, where MxOy is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and experimental observation is explored, and an extensive comparison is made between the electrical properties of a number of the most interesting experimentally-prepared materials. In writing this article, we aim to provide both an accessible tutorial of the physical descriptions of transparent conducting oxides, and an up-to-date overview of the field, with a brief history, some key accomplishments from the past few decades, the current state of the field as well as postulation on some likely future developments.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3b08673d271bb452db7deef197b64ded9b2f39de

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In Materials Chemistry

Citations in the corpus

Towards Oxide Electronics: a Roadmap (2019, background): “Ga also has impact for its lower electron effective mass in the TCO which results in higher electron mobilities in n-type TCOs [803].”
Flexible Sensors—From Materials to Applications (2019, background): “This overlap results in larger electron mobility, which, together with the wide band-gap and low plasma frequency of this material, result in high conductivity and transparency [63,64].”