Crossover of the three-dimensional topological insulator Bi 2 Se 3 to the two-dimensional limit

By Yi Zhang, K. He, Cui-Zu Chang, Can-Li Song, Lili Wang, Xiangshan Chen, J. Jia, Z. Fang, X. Dai, Wen-Yu Shan and 6 more. 2009

1,228 citations recorded by the source corpus.

The gapless surface states of topological insulators could enable quantitatively different types of electronic device. A study of the topological insulating Bi2Se3 thin films finds that a gap in these states opens up in films below a certain thickness. This in turn suggests that in thicker films, gapless states exist on both upper and lower surfaces.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/399054e70fe4bf8f2c31afe9989834b63c25e8d4

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Citations in the corpus

Topological insulators, topological superconductors and Weyl fermion semimetals: discoveries, perspectives and outlooks (2015, neutral): “for device implementations (figure 10) [48, 67].”
Topological Insulator: $\hbox{Bi}_{2}\hbox{Te}_{3}$ Saturable Absorber for the Passive Q-Switching Operation of an in-Band Pumped 1645-nm Er:YAG Ceramic Laser (2013, background): “Currently, MBE growth [24], vapor–liquid–solid growth [25], and mechanical exfoliation of thin sheets from bulk crystals [26] can be used to prepare the high-quality topological insulator samples.”
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3 (2012, background): “This evanescent length agrees well with estimates for the extent of the surface states at x = 0 from ARPES measurements[21].”
Quantized Anomalous Hall Effect in Magnetic Topological Insulators (2010, background): “Recent experimental progress has shown that wellcontrolled layer-by-layermolecular beam epitaxial thin-film growth can be achieved (19, 20), and various transition metal elements (such as Ti, V, Cr, and Fe) can be substituted into the parent compounds with observable ferromagnetism even above 100 K ”
Angle-resolved photoemission studies of quantum materials (2020, neutral): “43, while at the same time the bulk band structure is quantized into a series of quantum well states due to the spatial confinement (Sakamoto et al., 2010; Zhang et al., 2010).”
Solution processed MoS2-PVA composite for sub-bandgap mode-locking of a wideband tunable ultrafast Er:fiber laser (2015, background): “While graphene has attracted much research interest for photonics and optoelectronics to date [13], it is only one member of a much wider class of 2d materials, which includes, for example, quasi-2d topological insulators [14, 15] such as Bi2Se3 and Bi2Te3, transition metal dichalcogenides (TMDs), s”
Mode-locking of fiber lasers using novel two-dimensional nanomaterials: graphene and topological insulators [Invited] (2015, background): “High quality TI films can be obtained by molecular beam epitaxy growth [34], vapor-liquid-solid growth [35], mechanical exfoliation of thin sheets from bulk crystals [36], or liquid phase exfoliation (LPE), forming solutions with TI sheets dispersed in solvents, like acetone or isopropyl alcohol [27”